| 摘要 |
PURPOSE:To realize a p-n junction by a method wherein a gallium nitride-based compound semiconductor which has been doped with a p-type dopant is etched, uneven parts are formed on its furface and the compound semiconductor is annealed at a specific temperature. CONSTITUTION:A gallium nitride-based compound semiconductor 1 which has been doped with a p-type dopant is etched, uneven parts are formed on its surface, and the gallium nitride-based compound semiconductor is annealed at a temperature of 400 deg.C or higher. Its annealing operation is performed in a nitrogen atmosphere which has been pressurized ay a decomposition pressure or higher of the gallium nitride-based compound semiconductor at its annealing temperature in order to prevent N in the gallium nitride-based compound semiconductor such as GaN, GaAlN or the like from being decomposed and discharged. Thereby, a p-type whose resistance is low is formed, a resistance value is made uniform on the whole wafer irrespective of a film thickness, and a p-n junction can be realized. |
