发明名称 MANUFACTURE OF FLOATING STRUCTURE
摘要 <p>PURPOSE:To provide a method, in which a floating structure of complicated shape can be manufactured by anisotropic etching, even if a single-side process is used in the method. CONSTITUTION:After a trench is formed on a silicon substrate, anisotropic etching is applied to the trench part by the use of a correcting mask pattern as a mask pattern, in which a rectangular trench 43 is formed from a recessed corner formed by the trench to almost the half or more of a pattern width at an angle of almost 45 degrees to the direction of Miller indices {110}, so that a floating structure is manufactured.</p>
申请公布号 JPH06275850(A) 申请公布日期 1994.09.30
申请号 JP19930089298 申请日期 1993.03.23
申请人 OMRON CORP 发明人 KAWABATA TATSUHISA;SAKATA MINORU
分类号 G01L9/04;G01L9/00;G01P15/12;H01L21/306;H01L29/84;(IPC1-7):H01L29/84 主分类号 G01L9/04
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