摘要 |
<p>PURPOSE:To provide a method, in which a floating structure of complicated shape can be manufactured by anisotropic etching, even if a single-side process is used in the method. CONSTITUTION:After a trench is formed on a silicon substrate, anisotropic etching is applied to the trench part by the use of a correcting mask pattern as a mask pattern, in which a rectangular trench 43 is formed from a recessed corner formed by the trench to almost the half or more of a pattern width at an angle of almost 45 degrees to the direction of Miller indices {110}, so that a floating structure is manufactured.</p> |