Non-volatile memory

摘要

A non-volatile memory is specified, in which a high voltage is required for the erasing and writing in of data, the high voltage on a word line being limited in a reliable way to an appropriate value. Between in each case a line-voltage switch on a respective word line and a memory cell arrangement there is provided a level-holding device for limiting the voltage to a predetermined value, in order to prevent a deterioration or destruction of the properties of selection transistors of a memory cell caused by an excessive rise in the voltage on the word line. Furthermore, with the configuration of the memory as a MOS device, the surface-area requirement of the level-holding device is reduced.