发明名称 |
POLY SILICON RESISTANCE |
摘要 |
The method for fabricating a polysilicon resistor is disclosed in which polysilicon and CVD nitride are sequentially deposited on a field oxide layer, and heat-treated under the ambient of nitrogen at a high temperature, to form an isolation region and a n+ heavily doped collector, thereby growing the grain size of the polysilicon.
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申请公布号 |
KR940008884(B1) |
申请公布日期 |
1994.09.28 |
申请号 |
KR19920010947 |
申请日期 |
1992.06.23 |
申请人 |
SAMSUNG ELECTONICS CO., LTD. |
发明人 |
KO, JANG - MAN;LEE, KYONG - HO |
分类号 |
H01C7/00;(IPC1-7):H01C7/00 |
主分类号 |
H01C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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