发明名称 LEAD FRAME FOR SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To obtain the title lead frame wherein, while it makes use of the excellent characteristic of gold, it can be manufactured at comparatively low costs by a method wherein the whole face of the required part of a conductive member composed of a copper-based alloy having a substratum nickel-plated part has a gold-plated part in a specific thickness or lower. CONSTITUTION:The whole face or the required part of a conductive member 11 composed of a copper-based alloy having a substratum nickel-plated part 12 has a sold-plated part 13 in 0.15mum or lower. For example, a lead frame 10 for a semiconductor device is formed in such a way that a base material 11 is composed of a copper-based alloy, that it has a substratum nickel-plated part 12 and that its surface has a gold-plated part 13. The thickness of the substratum nickel-plated part 12 is set at about 0.2 to 1mum, and the thickness of the gold-plated part 13 is set at about 0.1mum. Thereby, when the nickel-plated part 12 is formed as the substratum of the thin gold-plated part 13 and even when a pinhole or the like exists on the surface of the gold-plated part 13, a local battery is formed by the action of the base material 11 composed of the copper-based alloy with gold, and the base material 11 acts as an anode so as to prevent the title lead frame from being corroded quickly.</p>
申请公布号 JPH06268132(A) 申请公布日期 1994.09.22
申请号 JP19930082646 申请日期 1993.03.16
申请人 MITSUI HIGH TEC INC 发明人 MATSUBARA TOSHIYA
分类号 C23C18/52;C23C28/02;C25D5/10;C25D7/00;C25D7/12;H01L23/50;(IPC1-7):H01L23/50 主分类号 C23C18/52
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