发明名称 Verbindungstechnik mit dielektrischen Schichten.
摘要 In accordance with one embodiment of the invention, a process for interconnecting in which the circuitry of two substrates (10, 11) comprises the step of terminating the circuitry on bonding pads that are arranged in parallel rows with the first row of each substrate being nearest an edge of the substrate. The bonding pads of the two first rows of the two substrates are joined by conductors (13) of a dielectric tape (14) that bridges the two substrates. The conductors overlap the edges of the dielectric tape and are organized to permit them to be bonded to corresponding bonding pads of the two substrates, for example, by soldering. The two second rows of bonding pads are joined by conductors on a second dielectric tape (17) which is wide enough to cover two first rows of bonding pads and thereby provide electrical insulation. In like manner, successive tape layers are of progressively wider widths to provide insulation from interconnections beneath them, while permitting conductors carried by the tapes to overlap the edges and contact exposed bonding pads. In this manner, the principle of TAB bonding can be used for making connections to the bonding pads of chips without the need for arranging all of the bonding pads in a single row along the edge of the chip.
申请公布号 DE3850224(T2) 申请公布日期 1994.09.22
申请号 DE19883850224T 申请日期 1988.11.18
申请人 AT & T CORP., NEW YORK, N.Y., US 发明人 THOMAS, DONALD A., TITUSVILLE NEW JERSEY 08560, US
分类号 H01L21/60;H01L23/485;H01L23/498;H01R12/04;H01R43/02;H05K1/11;H05K1/14;H05K3/36 主分类号 H01L21/60
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