发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To provide a manufacturing method of an excellent semiconductor device wherein each element is mounted on a previously flattened insulative film, insulative resin is buried, and a wiring pattern is collectively formed from above the insulating film. CONSTITUTION:In a manufacturing method of a semiconductor device wherein mounting components different in height are collectively wired and connected, the mounting components 1, 2 different in height are collectively mounted on a flattened insulating film 4 in the manner in which the wiring surfaces face the film 4, insulating resin 3 is buried in the part between the components and cured to fix the components, trenches 8 corresponding with a wiring pattern are formed on the insulative film 4, conductor material is buried in the trenches 8 to constitute a wiring pattern, and, at the same time, the mounting components 1, 2 are connected with bonding pads 6.</p>
申请公布号 JPH06260564(A) 申请公布日期 1994.09.16
申请号 JP19930041648 申请日期 1993.03.03
申请人 OKI ELECTRIC IND CO LTD 发明人 HONMA ROKURO
分类号 H01L21/60;H01L21/3205;H01L21/3213;H01L23/12;H01L23/28;H01L25/00;(IPC1-7):H01L23/12;H01L21/320 主分类号 H01L21/60
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