| 摘要 |
PURPOSE:To provide a satisfactory alloy bonding by integrating an assembly of a Si wafer and Al and that of Al and a Mo plate once after they are separately alloyed in a alloy bonding of a Si wafer on a Mo plate through Al. CONSTITUTION:A dummy Si plate 5 is prepared in the codnduction pattern the same as that on the surface for receiving wafer 1 in alloy bonding. It is laid on a Mo plate through an Al foil 3, and alloy bonded by a high temperature heat treatment. A Si-Al alloy soldering material 3a generated at this point and the Mo plate 2 sufficiently match each other, thus accomplishing ideal alloy combination while an projected alloy section b intrudes into the Si plate 5. Therefore, the surface of the Si plate 5 is fround to remove the intruding section 3b unit1 the surface of the soldering material 3a left becomes even. Subsequently, a new Al plate 3 is laid on the plate. Through the new plate, the Si wafer is thermally treated and alloy bonded. With such an arrangement, though the Al plate and Mo plate are bonded at a high temperature, the bonding of the Al plate and Si plate is possible at a low temperature such as 660 deg.C. In this manner, a satisfactory alloy bonding can be done. |
