| 摘要 |
PURPOSE:To obtain a sintered compact giving an ITO film low in resistance and uniform in film resistance on a body to be film formed and film thickness by making the sintered compact mainly containing In, Sn and 0 and specifying average crystal diameter. CONSTITUTION:The ITO sintered compact mainly contains indium, tin and oxygen and is < 2mum in average crystal diameter. The sintered compact is used as a target and is also used for a tablet for ITO vapor deposition or the like to obtain the excellent ITO film. The uniformity of film resistance distribution or film thickness distribution of the obtained ITO film is improved by making the average crystal diameter of the ITO sintered compact or ITO target <2mum. That is, the film resistance distribution or the film thickness distribution depends on the releasing angle distribution of sputtered particles from the surface of a target and the crystal grains per unit surface area of the target is increased by decreasing average crystal diameter. As a result, the crystal plane orientation per unit surface area is diversified and the releasing angle of the sputtered particle is uniformly distributed without inclining toward a special direction. |
