Pulsed plasma enhanced CVD of metal silicide conductive films such as TiSi2

摘要

In semiconductor manufacture, a pulse plasma enhanced chemical vapor deposition (PPECVD) method is provided for depositing a conductive film of low resistivity on a substrate. The PPECVD method is especially suited to the deposition of metal silicides such as TiSix on a silicon substrate during contact metallization. The PPECVD method can be carried out in a vacuum reaction chamber of a cold wall CVD reactor. A metal precursor deposition gas such as TiCl4 is reacted with a silicon source gas such as SiH4 at a deposition temperature of about 500 DEG C. For generating a pulsed plasma, an rf power supply is coupled to the reaction chamber and to a pulse generator.