| 摘要 |
PURPOSE: To improve the performance of a TFT-LCD by adjusting an overlap interval up to 2μor more by a free cell alignment method and reducing the width of a semiconductor layer less than the width of a gate electrode. CONSTITUTION: When a substance having a larger refractive index is used as a 1st gate insulating film 13 and a substance having a small refractive index is used as a 2nd gate insulating film 14, light is refracted to the inside of a gate electrode 12 due to a light diffraction phenomenon on a 1st gate insulating film part (a) on the corner of the gate electrode 12 at the time of back exposure and light is refracted to the inside of the gate electrode 12 on a boundary (b) between the films 13, 14, i.e., a photosensitive film 17 is exposed so as to increase the overlap interval. An exposed etch stopper layer 16 is selectively removed by using the exposed photosensitive film 17 as a mask. Consequently throughput can be improved.
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