| 摘要 |
<p>PURPOSE:To provide a mask for photoexposure for production of semiconductor integrated circuits capable of forming transfer patterns faithful to a design pattern without largely increasing a data quantity. CONSTITUTION:The mask 14 for photoexposure is produced by extracting a part having a basic periodic structure among design patterns 11 of the semiconductor integrated circuits, forming auxiliary pattern data provided with the very small auxiliary patterns 13 which are not transferred to a semiconductor substrate above in places corresponding to the corner parts of the main pattern 12 of the basic periodic structure and synthesizing this auxiliary pattern data and the main pattern data corresponding to the design pattern 11. Since the auxiliary patterns 13 are formed in the places corresponding to the corner parts of the main pattern 12 including the points varying from the periodic structure, the transfer patterns faithful to the design pattern 11 are formed while the increase in the data quantity by addition of the auxiliary patterns 13 is minimized.</p> |
