发明名称 |
Fully depleted lateral transistor. |
摘要 |
The breakdown characteristics of a lateral transistor integrated in an epitaxial layer of a first type of conductivity grown on a substrate of an opposite type of conductivity and comprising a drain region formed in said epitaxial layer, are markedly improved without recurring to critical adjustments of physical parameters of the integrated structure by forming a buried region having the same type of conductivity of the substrate and a slightly higher level of doping at the interface between the epitaxial layer and the substrate in a zone laying beneath the drain region of the transistor. <IMAGE> |
申请公布号 |
EP0613186(A1) |
申请公布日期 |
1994.08.31 |
申请号 |
EP19930830073 |
申请日期 |
1993.02.24 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L. |
发明人 |
VILLA,FLAVIO;RAVANELLI,ENRICO MARIA ALFONSO |
分类号 |
H01L21/336;H01L29/10;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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