| 摘要 |
<p>This invention relates to the manufacture of semiconductor devices and in particular to such devices which include aluminium tracks deposited on a dielectric layer. A semiconductor device is schematically illustrated at (10) and includes an under layer (11) or dielectric material, aluminium tracks (12) and further deposited dielectric layers (13-17). Layers (13 and 15) are planarisation layers; layers (14 and 16) are capping layers and layer (17) is a passivation layer. The under layer (11) is typically heated, after formation, to remove any excess moisture and the aluminium tracks (12) are then deposited. A barrier layer (22) is then deposited prior to the deposition of the subsequent dielectric layer (13).</p> |
