| 摘要 |
The method manufactures P type MOSFET a having short channel and shallow junction depth by using a silicide process and boron-diffused polysilicon. The method comprises the steps of: (A) growing a field oxide layer (22) on a substrate (22) and injecting ion into an active region to form a P-type channel; (B) vaporizing a gate oxide layer (1), a polysilicon (2), an oxide layer (3), patterning, forming a gate and forming a gate side wall (4); (C) forming a silicide (5) on a source drain region and spraying a first polysilicon (6) to form a source/drain (7); (D) printing insulating layer (8) on a whole surface and forming a contact; and (E) vaporiting a metal.
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