发明名称 |
Method of forming superconducting oxide ceramic materials having high critical densities of superconducting current |
摘要 |
Superconducting oxide ceramics having a high density of superconducting current are formed without making use of very high temperatures higher than 1000 DEG C. Superconducting oxide material is placed in a crucible, melted and fired at a relatively low temperature. During the melting and firing step, the partial pressure of oxygen is reduced in order to lower the melting point of the ceramic. After the firing, the partial pressure of oxygen is increased.
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申请公布号 |
US5338722(A) |
申请公布日期 |
1994.08.16 |
申请号 |
US19930032172 |
申请日期 |
1993.03.12 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TAKEMURA, YASUHIKO |
分类号 |
C01G1/02;C01G29/00;H01L39/24;(IPC1-7):C01G3/02 |
主分类号 |
C01G1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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