发明名称 |
In-situ endpoint detection method and apparatus for chemical-mechanical polishing using low amplitude input voltage |
摘要 |
An in-situ thickness monitoring/endpoint detection method and apparatus for chemical-mechanical polishing (CMP) of a dielectric layer on a top surface of a semiconductor wafer is disclosed. The apparatus comprises center and guard electrodes and associated electronic circuitry, including a high frequency, low voltage signal generating means, for converting a current which is inversely proportional to the dielectric layer thickness into a corresponding analog voltage. A position detection device triggers an analog-to-digital converter to convert the analog voltage into a digital signal while the wafer is located within a detection region as the wafer is being polished. A control means gathers the digital signals corresponding to the thickness data for processing and CMP device control.
|
申请公布号 |
US5337015(A) |
申请公布日期 |
1994.08.09 |
申请号 |
US19930075628 |
申请日期 |
1993.06.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LUSTIG, NAFTALI E.;FEENSTRA, RANDALL M.;GUTHRIE, WILLIAM L. |
分类号 |
B24B37/04;G01B7/34;G01D5/24;(IPC1-7):G01R27/26 |
主分类号 |
B24B37/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|