发明名称 Semiconductor pressure sensor having double diaphragm structure
摘要 In a semiconductor sensor having double diaphragm structure, in which pressure to be measured is applied to diaphragm portions having distortion gages via a liquid filled in spaces partitioned by sealed diaphragms, as circuit elements of a signal processing circuit for processing an output of a distortion gage bridge are integrated in and on a semiconductor chip having diaphragm portions, the number of component parts used is reduced, and a compact size, a low cost, and high reliability are attained. This arrangement can be applied to any of the pressure sensors for detecting absolute pressure, relative pressure, and differential pressure.
申请公布号 US5335549(A) 申请公布日期 1994.08.09
申请号 US19920982655 申请日期 1992.11.27
申请人 FUJI ELECTRIC CO., LTD. 发明人 KATO, KAZUYUKI
分类号 G01L9/04;G01L9/00;(IPC1-7):G01L7/00 主分类号 G01L9/04
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