发明名称 |
Apparatus for treating the surface of a semiconductor substrate |
摘要 |
In an apparatus for treating the surface of a semiconductor substrate, hydrogen fluoride is dissolved in a nonaqueous solvent, ionizing anhydrous hydrogen fluoride, and the solution is vaporized. The vapor of the solution is introduced onto the surface of the semiconductor in a reaction chamber to treat this surface. The semiconductor substrate can be subjected to treatments, such as cleaning and etching, without producing reactions products on the surface.
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申请公布号 |
US5336356(A) |
申请公布日期 |
1994.08.09 |
申请号 |
US19920914326 |
申请日期 |
1992.07.17 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
BAN, COZY;OHMORI, TOSHIAKI;FUKUMOTO, TAKAAKI |
分类号 |
H01L21/302;H01L21/304;H01L21/306;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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