| 摘要 |
PURPOSE: To reduce noise in an integrated semiconductor device by electrically bypassing the upper conductors, lower conducts, first and second side conductors on semiconductor dies. CONSTITUTION: An on-chip noise-shielding structure 90 functions as a noise shield for signals transmitted through a central conductor 49c and protects them against noises by transmitting a stable reference voltage through an on- chip coaxial cable structure. Conductive material at three levels are used for the formation of the noise-shielding structure, and in a dual-structure metallic DRAM, an upper-level conductive material 42a is formed of two metallic layers. The upper-level conductive material 42a constitutes a noise shield for the central conductor 49c. When the metal layers are formed, they can be formed on a silicon substrate. Thus a shielding structure can be formed, without adding special stages of processing when the device of dual metal structure is being processed. Further, since outer conducts are grounded, noise-eliminating characteristic can be enhanced. |
