| 发明名称 |
Functional deposited films, and process and apparatus for their formation |
| 摘要 |
<p>A Photovoltaic element comprises a first semiconductor of a first-conductivity type, a first i-type semiconductor formed by microwave plasma, a second i-type semiconductor formed by high-frequency plasma and a second semiconductor of a conductivity type reverse to the first-conductivity type, wherein the second semiconductor is formed by plasma doping. <IMAGE></p> |
| 申请公布号 |
AU5480994(A) |
申请公布日期 |
1994.08.04 |
| 申请号 |
AU19940054809 |
申请日期 |
1994.01.31 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
YASUSHI FUJIOKA;SHOTARO OKABE;MASAHIRO KANAI;HIDEO TAMURA;ATSUSHI YASUNO;AKIRA SAKAI;TADASHI HORI |
| 分类号 |
H01L21/205;H01L31/075;H01L31/20 |
主分类号 |
H01L21/205 |
| 代理机构 |
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| 地址 |
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