| 摘要 |
<p>PURPOSE:To reduce the probability of generation of contact failure by connecting a transparent picture element electrode to a thin film transistor through plural contact holes. CONSTITUTION:A transparent picture image element electrode 1 is connected to a drain 5D of a thin film transistor 2 through two contact holes 21, 22 to reduce the probability of generation of contact failure in comparison with the conventional connection through one contact hole. Since the height t1 of an insulating film 26a between these contact holes 21, 22 is lower than the height t2 of the peripheral insulating film 26, which consists of a first and a second insulating films 10 and 11, the transparent picture element electrode 1 is extended on the higher insulating film 26 through the lower insulating film 26a, namely, an apparent stage difference between the contact holes 21, 22 is relaxed, and the coverage of the electrode 1 is improved to eliminate the contact failure.</p> |
