METHOD FOR FORMING FIELD EFFECT TRANSISTOR

摘要

PURPOSE: To provide a method of manufacturing a deep submicron field-effect transistor only through an optical lithography technique. CONSTITUTION: A comparatively broad opening 215 is formed through an optical method. Composite side walls 55 different from each other in etching resistance are formed inside the opening 215, and a smaller final opening is demarcated than a case where a conventional optical method is used. By etching the final opening, a channel controlled in length is exposed. Channels are injected into the opening 215. Furthermore, a source and a drain are injected, and an LDD region previously doped in an active region is protected by the side walls 55.