| 摘要 |
PURPOSE:To improve resist formation so as not to run, in a method for forming a buried impurity layer at a deep position of a semiconductor substrate. CONSTITUTION:A resist film 2 of 3mum or more in thickness is formed on a semiconductor substrate 1. The resist film 2 is selectively exposed to light, and a picture image is formed. After exposure, the resist film 2 is baked at a temperature of 110-130 deg.C before development. The resist film 2 is developed and then rinsed, and a resist pattern 8 is formed. The formed resist pattern 8 is baked at a temperature of 100-130 deg.C. By applying the resist pattern 8 to a mask, impurity ions 9 are implanted in the main surface of a semiconductor substrate 1 with high energy. Hence a buried impurity layer 9a is formed at a deep position of the semiconductor substrate 1. The resist pattern 8 is eliminated.
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