| 摘要 |
<p>The density and distribution of crystal defects of a semiconductor wafer, occurring in a heat-treatment process, are predicted on the basis of the densities and distributions of interstitial atoms and vacancies frozen in the crystal grown in the section corresponding to a single-crystal semiconductor as a starting material of the semiconductor wafer, the densities and the distributions of interstitial atoms and vacancies can be determined from a first diffusion equation, as a function of the positions inside the crystal, expressing the change with time of the concentration of the interstitial atoms inside the single-crystal semiconductor during the growth process from a molten liquor, and a second diffusion equation, as a function of the positions inside the crystal, expressing the change with time of the concentration of the vacancies inside the crystal. The first and second diffusion equations comprise a term expressing contribution of ordinary diffusion to the change of the concentration of the interstitial atoms or vacancies with time, a term expressing contribution of gradient diffusion to the change of the concentration of the interstitial atoms of vacancies with time, and a term expressing contribution of an annihilation of interstitial atoms and vacancies to the change of the concentration of the interstitial atoms or vacancies with time.</p> |
