| 摘要 |
PURPOSE:To obtain an extremely small decrease in luminance of a light emitting diode during service and reduce a forward rise voltage, by using a wafer with a specific carrier concentration of a gallium phosphide arsenide mixed crystal rate constant layer into which a nitrogen is doped. CONSTITUTION:A gallium phosphide epitaxial layer 2, a gallium phosphide arsenide mixed crystal rate chafe layer 3, a gallium phosphide arsenide mixed crystal rate constant layer 4 and a gallium phosphide arsenide mixed crystal rate constant layer 5 into which a nitrogen is doped are formed on a single crystal substrate 1. When the layer 5 is grown, after the layer 2 to the layer 4 whose carrier concentration is in the range of 5X10<16>cm<-3> to 5m10<17>cm<-3> are grown, only a supply of a dopant is stopped and then the layer 5 is grown by introducing an ammonia, and thereby the Rallium phosphide arsenide mixed crystal rate constant layer 5 into which an element with a carrier concentration of less than 3X10<15>cm<-3> is doped can be obtained. Thus, a light emitting efficiency can be improved and a life of a light emitting diode can be prolonged. |
