| 摘要 |
<p>PURPOSE:To provide a TFT which is suitable for mass-production at a low price by providing a semiconductor film with a silicon film including the conductivity of a specific micro-crystal phase in the part distant from an i-type insulating film by within a limited value. CONSTITUTION:Plasma 9 is generated by a high-frequency power supply 8 between an anode electrode 6 and a cathode electrode 7, and while raw material gas and hydrogen gas are introduced in a reaction chamber, the raw material gas and the hydrogen gas are dissolved in the plasma 9 to form an a-Si film in a substrate 10. While only hydrogen gas is introduced therein, a dark conductivity of 1X10<-3>S/cm or more is obtained by applying hydrogen plasma treatment to the a-Si film formed on the substrate for about 50 seconds per one cycle. Therefor, a silicon film including the micro-crystal phase having conductivity of 50X10<-9>S/cm or more can be formed in the part of within 500Angstrom from the beginning of film formation.</p> |
