Memory device

摘要

According to this invention, there is provided a memory element and a matrix memory cell array including memory cells each having a nonlinear conductivity bipolar switching element constituted by a multi-layered structure which performs writing/reading operations of a polarization state of a ferroelectric body, i.e., a recording medium of the memory cell, as data and which is constituted by an insulating layer of a predetermined-thickness Langmuir-Blodgett film using most of a switching drive current as a direct tunnel current and conductive layers formed on both the surfaces of the insulating layer.