| 摘要 |
777,108. Semi-conductor devices. TELEFUNKEN GES. Sept. 25, 1953 [Sept. 26, 1952], No. 26406/53. Class 37. A method of making a semiconductor device comprising a semi-conductor crystal mounted on a conductive plate-shaped base which, with a dome-shaped member, forms a housing, the crystal having a lead extending therefrom, which method includes aperturing the domed member, applying the open end of the dome to a face of the base, passing said lead through the aperture and sealing the lead in the aperture and the dome to the base. In the embodiment described a single crystal 2 of Ge with a blob 3 of In or other acceptor impurity welded to its upper face is soldered to a circular or rectangular plate 1. A bell-shaped ervelope 5 of glass or other insulating material has its edges coated first with a silver paste which is fired, then with copper and is finally tinned together with the other engaging surfaces. The connection to the indium blob 3 consists of a wire 4 soldered, after assembly of the envelope or the plate, into a metal sleeve 7 sealed into the envelope 5 (Fig. 1). The soldering of crystal and envelope to the plate is effected either by R.F. induction heating or by passing a heavy current through the plate which has notches cut from its edges to produce intense local heating, the plate being afterwards trimmed of surplus metal. Reference has been directed by the Comptroller to Specification 714,976. |
