发明名称 |
Electronically controllable diode reflector matrix for missiles |
摘要 |
The diode matrix array (Dij) is implanted on an upper layer of silicon carbide (SiC), which is separated from a lower silicon substrate (Si) by an isolating oxide layer (SiO2). The silicon layer is a quarter of a wavelength thick and has a plane metallic reflector backing plate.The diode array reflects high frequency radar signals providing a calibrated reflector.
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申请公布号 |
FR2699742(A1) |
申请公布日期 |
1994.06.24 |
申请号 |
FR19920015385 |
申请日期 |
1992.12.21 |
申请人 |
THOMSON CSF |
发明人 |
FRIEDERICH ALAIN;BISARO RENE |
分类号 |
H01Q3/46;(IPC1-7):H01Q15/14;H01L27/12 |
主分类号 |
H01Q3/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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