MANUFACTURE OF INSULATED GATE BIPOLAR TRANSISTOR,申请号JP19920325867-传众专利搜索

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发明名称	MANUFACTURE OF INSULATED GATE BIPOLAR TRANSISTOR
摘要
申请公布号	JPH06177390(A)	申请公布日期	1994.06.24
申请号	JP19920325867	申请日期	1992.12.07
申请人	FUJI ELECTRIC CO LTD	发明人	WATANABE MASAHIDE
分类号	H01L29/73;H01L21/331;H01L21/336;H01L29/739;H01L29/78;(IPC1-7):H01L29/784	主分类号	H01L29/73
代理机构		代理人
主权项
地址

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