A MOS TRANSISTOR HAVING A COMPOSITE GATE ELECTRODE AND METHOD OF FABRICATION

摘要

A novel, reliable, high performance MOS transistor (300) with a composite gate electrode which is compatible with standard CMOS fabrication processes. The composite gate electrode comprises a polysilicon layer (302) formed on a highly conductive layer (304). The composite gate electrode is formed on a gate insulating layer (301) which is formed on a silicon substrate (308). A pair of source/drain regions (310a, 310b) are formed in the substrate and are self-aligned to the outside edges of the composite gate electrode.