| 摘要 |
<p>A contact layer (11), a diffusion prevention layer (12) and a solder bond layer (13) are disposed on the back of a semiconductor substrate (10), and this solder bond layer (13) is joined to a bed (15) by a solder layer (14). The contact layer (11) comprises a rare earth metal film, a rare earth metal silicide film or their composite film, the diffusion prevention layer (12) comprises an iron-containing metal and the solder bond layer (13) comprises a Ni-Au alloy. Since the diffusion prevention layer (12) is constituted by the Fe-containing metal, diffusion of tin in the solder can be prevented, and the solder bond layer (13) comprising the Ni-Au alloy can keep excellent solderability and can reduce the number of layers of a laminate. The Ni-Au alloy is used for a surface treatment of at least one of the joint members, and is heated in a reducing atmosphere through a solder foil to obtain high air-tightness.</p> |
