| 发明名称 |
Method of making thin film transistors including recrystallization and high pressure oxidation |
| 摘要 |
A thin film transistor is formed by depositing amorphous silicon and forming a gate structure and then using a high-pressure oxidation to form a high-quality gate oxide that has a layered structure.
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| 申请公布号 |
US5322807(A) |
申请公布日期 |
1994.06.21 |
| 申请号 |
US19920932445 |
申请日期 |
1992.08.19 |
| 申请人 |
AT&T BELL LABORATORIES |
发明人 |
CHEN, MIN-LIANG;ROY, PRADIP K. |
| 分类号 |
H01L29/78;H01L21/336;H01L29/49;H01L29/786;(IPC1-7):H01L21/265;H01L21/335 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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