| 摘要 |
PURPOSE:To improve the production yield by eliminating the residual air by a method wherein a substrate and a mask are placed opposing against each other with an interposed spacer inbetween, and the space is vacuumized while the spacer is removed making the substrate and the mask contact closely, in the procedure of exposing resist being painted on the surface of the substrate to be treated thru the mask. CONSTITUTION:When a pattern of the master mask 11 is transfered to the mask material 12 to form the working mask for preparing the semiconductor device, a substrate which is obtained by applying metal film such as Cr to glass plate and by providing photoresist on its is used. The resist face is made opposite to the pattern face of the master mask 11, wedge-shaped spacers 13, which can be put in and out by turning the axes 14 are put between both the faces. After this, the gap between the mask 11 and the substrate 12 and the space of both sides of the two plates are vacuumized by using the exhaust ports 22, 27, the spacers 13 are taken out after air is sufficiently removed to make the two plates come closely in contact. The substrate is irradiated with ultraviolet rays through the glass window 28 and the mask 11. |
