发明名称 METHOD FOR DETERMINING THICKNESS OF CHEMICAL VAPOR DEPOSITED LAYERS
摘要 METHOD FOR DETERMINING THICKNESS OF CHEMICAL VAPOR DEPOSITED LAYERS The thickness of a layer of material deposited by chemical vapor deposition, especially a diamond layer, is monitored by providing at least one substrate on which the material is deposited, with at least one perforation of a predetermined size therein. The relationship between the thickness of the layer formed in said perforation and the thickness of the layer formed on the substrate surface is determined, so that the thickness of the surface layer can be determined from the thickness of the layer formed in the perforation.
申请公布号 CA2103426(A1) 申请公布日期 1994.06.17
申请号 CA19932103426 申请日期 1993.11.18
申请人 GENERAL ELECTRIC COMPANY 发明人 ANTHONY, THOMAS R.;FLEISCHER, JAMES F.;WOODRUFF, DAVID W.
分类号 C23C16/26;C23C16/04;C23C16/27;C23C16/52;(IPC1-7):C23C16/26;C30B29/04 主分类号 C23C16/26
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