| 摘要 |
PURPOSE:To provide a semiconductor memory device and its manufacturing method which are suitable for realizing the fine structure of the device by a method wherein an insulating film is buried in a substrate, a trench is formed through the insulating film, the lower part of the substrate is utilized as a cell-plate, a capacitor dielectric film and a capacitor electrode are buried inside the trench and capacitor is connected to a switching transistor above the trench. CONSTITUTION:In a semiconductor memory device, an insulating film 102 buried in a semiconductor substrate 101, a trench 105 formed through the insulating film 102, a capacitor composed of the semiconductor substrate utilized as a plate electrode, a dielectric thin film 106 formed on the inner surface of the trench 105 and a storage electrode 107 buried inside the trench 105 and a MIS transistor formed on a semiconductor thin layer 103 on the surface of the semiconductor substrate 101 are provided. |
