发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To allow efficient operation upto low voltage by feeding a voltage boosted above power supply voltage to the emitter of a drive transistor for forming driving current of an output transistor on the power supply side. CONSTITUTION:A booster circuit 1 produces a voltage boosted above a power supply voltage Vcc using a periodic pulse signal subjected to frequency division by a frequency dividing circuit 16. The boosted voltage is fed to the emitter of a PNP drive transistor Q18 forming the driving current for an output transistor Q22 disposed on the power supply voltage Vcc side out of a pair of NPN push-pull output transistors Q22, Q23. Since emitter voltage of a drive transistor Q18 can be raised above the power supply voltage Vcc, output dynamic range can be enlarged by an amount corresponding to the base-emitter voltage of the drive transistor Q18. This constitution allows efficient operation upto low power supply voltage.
申请公布号 JPH06165567(A) 申请公布日期 1994.06.10
申请号 JP19920330932 申请日期 1992.11.17
申请人 HITACHI LTD 发明人 SEKI KUNIO;OKUBO YUICHI
分类号 H02P6/06;H02P6/08 主分类号 H02P6/06
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