| 发明名称 |
POLYEMITTER STRUCTURE |
| 摘要 |
PURPOSE: To improve the reproducibility and performance characteristics by forming a polyemitter structure having a thin interface layer adhering between the emitter contact of polysilicon and the emitter of crystal silicon without regrowing an SiOX layer. CONSTITUTION: An n-type doped hydrogenated microcrystalline silicon film 5 is adhering, as an interface film, between the emitter 3 of polysilicon and a polysilicon contact 7. |
| 申请公布号 |
JPH06163568(A) |
申请公布日期 |
1994.06.10 |
| 申请号 |
JP19920282813 |
申请日期 |
1992.10.21 |
| 申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
SHIYU JIYUN JIYON;IEJII KANITSUKI;DEEBUITSUDO II KOTETSUKI;KURISUTOFUAA KAA PAAKUSU;TSU JIYAN TEIEN |
| 分类号 |
H01L29/43;H01L21/205;H01L21/225;H01L21/28;H01L21/331;H01L29/45;H01L29/73;H01L29/737;(IPC1-7):H01L21/331;H01L29/46 |
主分类号 |
H01L29/43 |
| 代理机构 |
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| 主权项 |
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