发明名称 RESISTANCE THIN FILM
摘要 <p>PURPOSE: To provide a resistive thin film which has both a specific resistivity larger than a specific value and a temperature coefficient within a specific range. CONSTITUTION: A resistive thin film contains 40-95 atomic % of carbon, 4-60 atomic % of one or more types of metal elements, and 1-30 atomic % of hydrogen, and hydrocarbon is not produced in the thin film. One to 95% of carbon can be partially replaced by one or more elements selected from a group consisting of silicon, boron and nitrogen for obtaining a further larger resistance value. The metal elements are preferably one or more metallic element selected from a 1st subfamily and 8th subfamily of the periodic table of elements and, particularly preferably, Ag, Pt, Au and/or Cu. With this constitution, a specific resistivity larger than in the case of CrSi can be obtained with the same temperature coefficient and further, a long-term stability can be improved significantly.</p>
申请公布号 JPH06163201(A) 申请公布日期 1994.06.10
申请号 JP19930143759 申请日期 1993.06.15
申请人 PHILIPS ELECTRON NV 发明人 HAINTSU DEIMIGEN;KURAUSUUPEETAA KURAGESU;RAINAA BEIRU;KURAUSU TAUBE;RUDORUFU TEIEN;FUBERUTSUSU HIYUBUSHIYU;ETSUKARUTO BETOGAA
分类号 H01C7/00;H01C17/12;(IPC1-7):H01C7/00 主分类号 H01C7/00
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