Electrode for use in plasma etching.

摘要

The present invention provides an electrode for use in plasma etching, composed of a silicon single crystal or a silicon single crystal having a large number of small through-holes. The electrode of the present invention is free from structural destruction, resultantly has a long life, and causes no staining of wafer surface owing to structural destruction. Further, when the electrode has an appropriate number of small through-holes, a reactant gas can flow into a plasma smoothly and enables more efficient plasma etching.