Light-emitting gallium nitride-based compound semiconductor device.

摘要

A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure (22) includes a light-emitting layer (18) formed of a low-resistivity InxGa1-xN (0 < x < 1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer (16) is joined to one surface of the light-emitting layer (18) and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer (18). A second clad layer (20) is joined to another surface of the light-emitting layer (18) and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer (18).