Method for manufacturing semiconductor light-receiving elements

摘要

A method for manufacturing semiconductor light-receiving elements is provided. The method includes the steps of forming an epitaxial layer including a light-receiving layer composed of at least In, Ga, and As on an n-InP substrate by supplying at least In gas, Ga gas, and As gas to a surface of the n-InP substrate from one side of a container accommodating the n-InP substrate, forming a p-type layer in the configuration of a floating island by thermally diffusing a p-type impurity into the light-receiving layer, and separating the n-InP substrate on which the p-type layer has been formed into semiconductor light-receiving elements.