SoI-Halbleiteranordnung und Verfahren zu ihrer Herstellung.
摘要
<p>The present semiconductor device comprises a first semiconductor substrate, an oxide film formed on the substrate and a second semiconductor substrate bonded to the oxide film. In particular, the semiconductor substrate further has a monocrystalline silicon layer which is formed by an epitaxial growth method on the second semiconductor substrate. Circuit elements are formed within the monocrystalline silicon layer.</p>
申请公布号
DE3587798(D1)
申请公布日期
1994.05.19
申请号
DE19853587798
申请日期
1985.09.18
申请人
KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA
发明人
NAKAGAWA, KAORU C/O PATENT DIVISION, MINATO-KU TOKYO 105;YAMAMOTO, YOSHIO C/O PATENT DIVISION, MINATO-KU TOKYO 105;MATSUOKA, NOBUTAKA C/O PATENT DIVISION, MINATO-KU TOKYO 105