RAPID PLASMA HYDROGENATION PROCESS FOR POLYSILICON MOSFET'S

摘要

A method for rapid plasma hydrogenation of semiconductor devices is provided in which the hydrogenation is conducted in two steps, the first step being conducted at a hydrogenation temperature that is higher than the out-diffusion temperature at which a substantial amount of hydrogen diffuses out of said semiconductor device; and in the second step, the semiconductor device is cooled to a temperature at which out-diffusion is substantially avoided while the hydrogenation plasma is maintained.