MOLYBDENUM ENHANCED LOW-TEMPERATURE DEPOSITION OF CRYSTALLINE SILICON NITRIDE

摘要

2130335 9409178 PCTABS00032 A process is described for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.