发明名称 |
SENSE-AMP CONTROL CIRCUIT OF THE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
The sense amplifier control circuit comprising a sense amplifier and a first sense amplifier driver, characterized in that a driver control circuit to keep current constant in the first sense amplifier driver, a bias circuit to keep current constant in the driving device and a means to drive the driver control circuit and the bias circuit are provided with the sense amplifier control circuit to reduce power noise.
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申请公布号 |
KR940003409(B1) |
申请公布日期 |
1994.04.21 |
申请号 |
KR19910013279 |
申请日期 |
1991.07.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG, HONG - SON;CHOE, JONG - HYON |
分类号 |
G11C11/409;G11C7/06;G11C11/407;G11C11/4091;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/409 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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