发明名称 SENSE-AMP CONTROL CIRCUIT OF THE SEMICONDUCTOR MEMORY DEVICE
摘要 The sense amplifier control circuit comprising a sense amplifier and a first sense amplifier driver, characterized in that a driver control circuit to keep current constant in the first sense amplifier driver, a bias circuit to keep current constant in the driving device and a means to drive the driver control circuit and the bias circuit are provided with the sense amplifier control circuit to reduce power noise.
申请公布号 KR940003409(B1) 申请公布日期 1994.04.21
申请号 KR19910013279 申请日期 1991.07.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG, HONG - SON;CHOE, JONG - HYON
分类号 G11C11/409;G11C7/06;G11C11/407;G11C11/4091;(IPC1-7):G11C11/407 主分类号 G11C11/409
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