Etching semicondudtor wafers

摘要

In a method for producing a semiconductor device such as a laser a compound semiconductor cap layer 11 including no aluminum is grown on a compound semiconductor layer 2 including aluminum. A mask pattern 21 comprising an insulating film is formed on a part of the compound semiconductor cap layer 11, and the exposed oxide film 12 is etched in an ammonium sulfide solution. The compound semiconductor wafer is then selectively etched away using a chlorine containing gas in a reaction chamber, and a groove formed in the etching process is filled with a compound semiconductor layer 1 grown in the reaction chamber by MOCVD. A regrowth interface 3 with no impurities such as oxygen and chlorine is attained, improving the quality of the regrown crystal layer 1. The etching gas may be a mixture ofAsH3 : HCl : H2.