发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A dry-etching method comprising the steps of forming carbon film on a substrate to be etched, forming a resist pattern on said carbon thin film, selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a gas containing oxygen atoms which are mixed at an atomic ratio of fluorine to oxygen of 198:1 to 1:2 so as to form a carbon film pattern, and selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks.
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申请公布号 |
US5302240(A) |
申请公布日期 |
1994.04.12 |
申请号 |
US19930020193 |
申请日期 |
1993.02.19 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HORI, MASARU;YANO, HIROYUKI;HORIOKA, KEIJI;HAYASHI, HISATAKA;JIMBO, SADAYUKI;OKANO, HARUO;TOMIOKA, KAZUHIRO;ITO, YASUHIRO;MORI, HARUKI |
分类号 |
H01L21/033;H01L21/308;H01L21/311;H01L21/314;H01L21/3213;(IPC1-7):H01L2/306;B44C1/22;C03C15/00;C23F1/00 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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