| 摘要 |
A thin film of silicon is formed on an electrically insulating substrate, such as transparent quarts, by deposition, such as glow discharge or CVD method. The thin film of silicon thus formed normally does not have a monocrystalline structure, but, in this manner, the thin film of silicon can be formed on a relatively large surface area. The substrate having formed thereon the thin film is then placed on a support plate, preferably, of a silicon wafer, and, then, a blanket light irradiation is carried out by a plurality of tungsten halogen lamps. The light irradiated from the lamps is preferentially absorbed by the support plate of silicon wafer which is thus heated and then transfers heat to the thin film by conduction. Thus, the thin film is heated uniformly by heat conduction so that the thin film is heat treated, thereby obtaining a desired property. For example, the thin film is monocrystallized uniformly.
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